منابع مشابه
Origin of the phonon Hall effect in rare-earth garnets.
The phonon Hall effect has been observed in the paramagnetic insulator Tb3Gd5O12. A magnetic field applied perpendicularly to a heat current induces a temperature gradient that is perpendicular to both the field and the current. We show that this effect is due to resonant skew scattering of phonons from the crystal field states of superstoichiometric Tb(3+) ions. This scattering originates from...
متن کاملTheory of the phonon Hall effect in paramagnetic dielectrics.
Based upon Raman spin-lattice interaction, we propose a theoretical model for the phonon Hall effect in paramagnetic dielectrics, which was discovered recently in an experiment [C. Strohm, G. L. J. A. Rikken, and P. Wyder, Phys. Rev. Lett. 95, 155901 (2005).]. The phonon Hall effect is revealed to be a phonon analogue to the anomalous Hall effect in electron systems. The thermal Hall conductivi...
متن کاملTheory of Phonon Hall Effect in Paramagnetic Dielectrics
Based upon spin-lattice interaction, we propose a theoretical model for the phonon Hall effect in paramagnetic dielectrics. The thermal Hall conductivity is calculated by using the Kubo formula. Our theory reproduces the essential experimental features of the phonon Hall effect discovered recently in ionic dielectric Tb3Ga5O12, including the sign, magnitude and linear magnetic field dependence ...
متن کاملCurrent-induced phonon renormalization in molecular junctions
Meilin Bai,1,2 Clotilde S. Cucinotta,2,* Zhuoling Jiang,1 Hao Wang,1 Yongfeng Wang,1,3 Ivan Rungger,2,4 Stefano Sanvito,2,* and Shimin Hou1,3,* 1Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, China 2School of Physics, Advanced Materials and Bioengineering Research Centre (AMBER) and Centre for Research on Adaptive Nanos...
متن کاملTunneling current induced phonon generation in nanostructures
We analyze generation of phonons in tunneling structures with two electron states coupled by electron-phonon interaction. The conditions of strong vibration excitations are determined and dependence of non-equilibrium phonon occupation numbers on the applied bias is found. For high vibration excitation levels self consistent theory for the tunneling transport is presented. Tunneling current ind...
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ژورنال
عنوان ژورنال: Physical Review B
سال: 2020
ISSN: 2469-9950,2469-9969
DOI: 10.1103/physrevb.102.134311